Structural Properties and Raman Spectra of Micron-Thick β-Ga2O3 Films Deposited on SiC/Porous Si/Si Substrates
| dc.contributor.author | Kidalov, Valerii | |
| dc.contributor.author | Derhachov, Mihailo | |
| dc.contributor.author | Revenko, Andrey | |
| dc.contributor.author | Gudymenko, Oleksandr | |
| dc.contributor.author | Redko, Roman | |
| dc.contributor.author | Sushko, Oleksii | |
| dc.contributor.author | Koptiev, Mihailo | |
| dc.contributor.author | Assmann, Marc | |
| dc.contributor.author | Johnson, Robert | |
| dc.contributor.author | Кідалов, Валерій Віталійович | |
| dc.date.accessioned | 2026-08-24T15:07:53Z | |
| dc.date.issued | 2025 | |
| dc.identifier.citation | Structural Properties and Raman Spectra of Micron-Thick β-Ga2O3 Films Deposited on SiC/Porous Si/Si Substrates / V. V. Kidalov, M. P. Derhachov, A. S. Revenko, O. I. Gudymenko, R. A. Redko, O. O. Sushko, M. M. Koptiev, M. A. Assmann, R. P. Johnson. ECS Journal of Solid State Science and Technology, 2025. Vol. 14. DOI: 10.1149/2162-8777/adfb52. | |
| dc.identifier.doi | 10.1149/2162-8777/adfb52 | |
| dc.identifier.uri | https://elar.tsatu.edu.ua/handle/123456789/21424 | |
| dc.language.iso | en | |
| dc.publisher | ECS Journal of Solid State Science and Technology | |
| dc.subject | gallium oxide | |
| dc.subject | beta-Ga2O3 | |
| dc.subject | silicon carbide | |
| dc.subject | SiC | |
| dc.subject | porous silicon | |
| dc.subject | heterostructures | |
| dc.subject | high-frequency magnetron sputtering | |
| dc.subject | HFMS | |
| dc.subject | X-ray diffraction | |
| dc.subject | XRD | |
| dc.subject | scanning electron microscopy | |
| dc.subject | SEM | |
| dc.subject | micro-Raman spectroscopy | |
| dc.subject | microelectronics | |
| dc.subject | optoelectronics | |
| dc.title | Structural Properties and Raman Spectra of Micron-Thick β-Ga2O3 Films Deposited on SiC/Porous Si/Si Substrates | |
| dc.type | Article |
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